onsemi NJW44H11G
Power Transistors
NJW44H11G Specifications
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 10A
- Terminals : 3
- Collector Emitter Voltage : 80V
- Emitter Base Voltage : 5V
- Collector Emitter Saturation Voltage : 1V
- Gain Bandwidth : 85MHz
- Max Power Dissipation : 120W
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | NJW44H11G |
|---|---|
| Datasheet | NJW44H11G Download |
| Manufacturer |  onsemi |
| Description | Power Transistors |
| Buy | Stock & Price |
FEATURES
● Fast Switching Speeds● High Frequency
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits
● Reliable Performance at Higher Powers
● Symmetrical Characteristics in Complementary Configurations
● Accurate Reproduction of Input Signal
● Greater Dynamic Range
● High Amplifier Bandwidth
APPLICATIONS
● High−end Consumer Audio Products ♦ Home Amplifiers ♦ Home ReceiversMAXIMUM RATINGS
(TA = 25°C) Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Total Power Dissipation @ TC = 25°C THERMAL CHARACTERISTICS Symbol VCEO VEBO IC ICM PD Max Unit 80 Vdc 5.0 Vdc 10 A 20 A 120 Watts Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Junction and Storage Temperature Range RqJC TJ, Tstg 1.04 − 65 to +150 °C/W °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
