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NSBA123TDP6 Datasheet PDF

onsemi NSBA123TDP6

Dual PNP Bias Resistor Transistors

Part No. NSBA123TDP6
Datasheet NSBA123TDP6 Download
Manufacturer
onsemi
Description Dual PNP Bias Resistor Transistors
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NSBA123TDP6 datasheet page 1 preview

FEATURES

● Simplifies Circuit Design
● Reduces Board Space
● Reduces Component Count
● S and NSV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
● This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant

MAXIMUM RATINGS

(TA = 25C, common for Q1 and Q2, unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 12 Vdc Input Reverse Voltage VIN(rev) 5 Vdc Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping† NSBA123TDP6T5G SOT−963 8,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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