onsemi NSR0230P2
Schottky Barrier Diode
FEATURES
● Extremely Fast Switching Speed● Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA
● Low Reverse Current
● NSV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 mA IFSM 1.0 A ESD Rating: Class 3B per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 2.0 mW/°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range RqJA TJ, Tstg 600 −55 to +125 °C/W °C 1.