onsemi NSS1C200L
PNP Transistor
| Part No. | NSS1C200L |
|---|---|
| Datasheet | NSS1C200L Download |
| Manufacturer |  onsemi |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS VCEO VCBO VEBO IC ICM −100 −140 −7.0 −2.0 −3.0 Vdc Vdc Vdc A A Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 490 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
