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NSS40300MDR2G Datasheet PDF

onsemi NSS40300MDR2G

PNP Transistor

Part No. NSS40300MDR2G
Datasheet NSS40300MDR2G Download
Manufacturer
onsemi
Description PNP Transistor
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NSS40300MDR2G datasheet page 1 preview

FEATURES

40 VOLTS 6.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 7,8 1 BASE 2 EMITTER 3 BASE 4 EMITTER COLLECTOR 5,6
● Current Gain Matching to 10%
● Base Emitter Voltage Matched to 2 mV
● This is a Pb−Free Device

MAXIMUM RATINGS

(TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −40 −40 −7.0 −3.0 −6.0 Unit Vdc Vdc Vdc A A 8 1 SOIC−8 CASE 751 STYLE 29 DEVICE MARKING 8 P40300 AYWWG G HBM Class 3B MM Class C 1 Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. P40300 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in eit...
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