onsemi NSS40301MDR2G
NPN Transistor
| Part No. | NSS40301MDR2G |
|---|---|
| Datasheet | NSS40301MDR2G Download |
| Manufacturer |  onsemi |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
40 VOLTS 6.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 44 mW COLLECTOR 7,8 2 BASE 1 EMITTER 4 BASE 3 EMITTER COLLECTOR 5,6● Current Gain Matching to 10%
● Base Emitter Voltage Matched to 2 mV
● This is a Pb−Free Device
MAXIMUM RATINGS
(TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max 40 40 6.0 3.0 6.0 Unit Vdc Vdc Vdc A A 8 1 SOIC−8 CASE 751 STYLE 16 DEVICE MARKING 8 N40301 AYWWG G HBM Class 3B MM Class C 1 Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. N40301 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either l...
