onsemi NST489AMT1
High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor
| Part No. | NST489AMT1 |
|---|---|
| Datasheet | NST489AMT1 Download |
| Manufacturer |  onsemi |
| Description | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Pb−Free Package is AvailableMAXIMUM RATINGS
(TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 2.0 3.0 Unit V V V A A 30 VOLTS, 3.0 AMPS NPN TRANSISTOR COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER 4 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead #1 Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD (Note 1) 535 4.3 RqJA (Note 1) PD (Note 2) 1.180 9.4 RqJA (Note 2) RqJL (Note 1) RqJL (Note 2) PDsingle (Notes 2 and 3) TJ, Tstg 106 110 50 1.75 −55 to +150 W mW/°C °C/W °C/W °C/W W °C 234 mW mW/°C °C/W Max Unit 6 5 1 2 TSOP−6 CASE 318G STYLE 6 DEVICE MARKING N2 M G G Stresses exceedingMAXIMUM RATINGS
may damage the device.
