onsemi NSVBAT54SWT1G
Dual Series Schottky Barrier Diodes
| Part No. | NSVBAT54SWT1G |
|---|---|
| Datasheet | NSVBAT54SWT1G Download |
| Manufacturer |  onsemi |
| Description | Dual Series Schottky Barrier Diodes |
| Buy | Stock & Price |
FEATURES
● Extremely Fast Switching Speed● Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
● AEC Qualified and PPAP Capable
● NSV Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
(TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C VR 30 V PF 200 mW 1.6 mW/C Forward Current (DC) Non−Repetitive Peak Forward Current tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IF IFSM IFRM 200 Max 600 300 mA mA mA Junction Temperature TJ −55 to 125 C Storage Temperature Range Tstg − 55 to +150 C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
