onsemi NSVBAV70T
Dual Switching Diode
| Part No. | NSVBAV70T |
|---|---|
| Datasheet | NSVBAV70T Download |
| Manufacturer |  onsemi |
| Description | Dual Switching Diode |
| Buy | Stock & Price |
FEATURES
● NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient (Note 1) RqJA 555 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C PD 360 mW 2.9 mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 345 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
