onsemi NSVMMBT5401L
High Voltage PNP Silicon Transistor
| Part No. | NSVMMBT5401L |
|---|---|
| Datasheet | NSVMMBT5401L Download |
| Manufacturer |  onsemi |
| Description | High Voltage PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● S and NSV Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −500 mAdc Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25C Derate Above 25C PD 225 mW 1.8 mW/C Thermal Resistance, Junction−to−Ambient RqJA 556 C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate Above 25C Thermal Resistance, Junction−to−Ambient PD RqJA 300 mW 2.4 mW/C 417 C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 C 1.
