onsemi NSVMMBTH10L
NPN Silicon VHF/UHF Transistor
| Part No. | NSVMMBTH10L |
|---|---|
| Datasheet | NSVMMBTH10L Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon VHF/UHF Transistor |
| Buy | Stock & Price |
FEATURES
● S and NSV Prefixes for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage THERMAL CHARACTERISTICS VCEO VCBO VEBO 25 Vdc 30 Vdc 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient (Note 1) RθJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient (Note 2) RθJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
