onsemi NSVR201MX
Schottky Barrier Diode
| Part No. | NSVR201MX |
|---|---|
| Datasheet | NSVR201MX Download |
| Manufacturer |  onsemi |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Small Interterminal Capacitance● Less Parasitic Components
● Small Forward Voltage
● Small−sized Package
● Pb−Free, Halogen Free and RoHS Compliant
● AEC−Q101 Qualified and PPAP Capable Typical
APPLICATIONS
● Microwave and Submilliwave Mixer● Microwave and Submilliwave Detector Specifications Table 1.
ABSOLUTE MAXIMUM RATINGS
at TA = 25°C Parameter Symbol Value Unit Reverse Voltage Forward Current Operating Junction and Storage Temperature VR IF TJ, Tstg 2 50 −55 to +150 V mA °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 V, 50 mA C = 0.15 pF typ. Schottky Barrier Diode X2DFN2 1.0 x 0.6, 0.65P CASE 714AB ELECTRICAL CONNECTION 1 Cathode Anode MARKING DIAGRAM RF M RF = Specific Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 January, 2019 − Rev.
