onsemi NSVT1418L
PNP Single Bipolar Transistor
FEATURES
● Large Current Capacitance● Low Collector to Emitter Saturation Voltage
● High Speed Switching
● High Allowable Power Dissipation
● AEC−Q101 Qualified and PPAP Capable
● Pb−Free, Halogen Free and RoHS Compliant
● Ultra Small Package Facilitates Miniaturization in End Products Typical
APPLICATIONS
● High Side Switch● Lighting, Infotainment
ABSOLUTE MAXIMUM RATINGS
at TA = 25°C Parameter Symbol Value Unit Collector to Base Voltage VCBO −180 V Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation (Note 1) Junction Temperature VCEO VEBO IC ICP PC Tj −160 V −6 V −1 A −2 A 0.42 W 150 _C Storage Temperature Range Tstg −55 to +150 _C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate. (250 mm2 x 0.8 mm) DATA SHEET 3 1...