onsemi NTB30N06
Power MOSFET
| Part No. | NTB30N06 |
|---|---|
| Datasheet | NTB30N06 Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Pb−Free Packages are Available TypicalAPPLICATIONS
● Power Supplies● Converters
● Power Motor Controls
● Bridge Circuits
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS 60 Vdc VDGR 60 Vdc Vdc VGS "20 VGS "30 ID 27 Adc ID 15 IDM 80 Apk PD 88.2 W 0.59 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to °C +175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 26 A, VDS = 60 Vdc) EAS 101 mJ Thermal Resistance, Junction−to−Case RqJC 1.7 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
