NTB5404N Datasheet PDF

FEATURES

● Low RDS(on)
● High Current Capability
● Low Gate Charge
● AEC−Q101 Qualified and PPAP Capable − NVB5404N
● These Devices are Pb−Free and are RoHS Compliant

APPLICATIONS

● Electronic Brake Systems
● Electronic Power Steering
● Bridge Circuits

MAXIMUM RATINGS

(TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current − RqJC Steady TC = 25°C ID State TC = 100°C 167 A 118 Power Dissipation − RqJC Steady State TC = 25°C PD 254 W Continuous Drain Current − RqJA (Note 1) Steady TA = 25°C ID State TA = 100°C 24 A 17 Power Dissipation − RqJA (Note 1) Steady TA = 25°C State Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature PD IDM TJ, TSTG 5.4 W 670 A −55 to °C 175 Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 45 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS EAS TL 75 A 1000 mJ 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.