onsemi NTB5605P
P-Channel Power MOSFET
| Part No. | NTB5605P |
|---|---|
| Datasheet | NTB5605P Download |
| Manufacturer |  onsemi |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Designed for Low RDS(on)● Withstands High Energy in Avalanche and Commutation Modes
● AEC Q101 Qualified − NTBV5605
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Power Supplies● PWM Motor Control
● Converters
● Power Management
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS $20 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State −18.5 A Power Dissipation (Note 1) Steady TA = 25°C PD State 88 W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A, L = 3.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) IDM −55 A TJ, −55 to °C TSTG 175 EAS 338 mJ TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) – Steady State RqJC 1.7 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.
