onsemi NTB65N02R
Power MOSFET
| Part No. | NTB65N02R |
|---|---|
| Datasheet | NTB65N02R Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Fast Switching 65 A, 24 V RDS(on) = 8.3 mW (TYP) D
MAXIMUM RATINGS
(TJ = 25°C Unless otherwise specified) Parameter Drain–to–Source Voltage Gate–to–Source Voltage Continuous Symbol VDSS VGS ID IDM PD TJ and Tstg EAS Value 24 ±20 65 160 78 –55 to 150 TBD Unit Vdc Vdc A A W °C 4 mJ TO–220AB CASE 221A Style 5 xxxxx YWW S G Drain Current (Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Single Pulse Drain–to Source Avalanche Energy – Starting TJ=25°C (VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 W) Thermal Resistance Junction–to–Case Junction–to–Ambient (Note 1) Junction–to–Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 10 Seconds MARKING DIAGRAMS RqJC RqJA RqJA TL 1.6 67 120 260 °C/W 1 °C D2PAK CASE 418B Style 2 2 3 1.
