NTBG1000N170M1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L NTBG1000N170M1.
NTBG1000N170M1 Key Features
- Typ. RDS(on) = 960 mW
- Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
- Low Effective Output Capacitance (typ. Coss = 11 pF)
- 100% Avalanche Tested
- RoHS pliant