• Part: NTBG1000N170M1
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 345.58 KB
Download NTBG1000N170M1 Datasheet PDF
onsemi
NTBG1000N170M1
Features - Typ. RDS(on) = 960 m W - Ultra Low Gate Charge (typ. QG(tot) = 14 n C) - Low Effective Output Capacitance (typ. Coss = 11 p F) - 100% Avalanche Tested - Ro HS pliant Typical Applications - Solar Inverters - Electric Vehicle Charging Stations - Electric Storing Systems - SMPS (Switch Mode Power Supplies) - UPS (Uninterruptible Power Supplies) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Remended Operation Values of Gate- to- Source Voltage TC < 175°C VDSS - 15/+25 V VGSop - 5/+20 V Continuous Drain Current (Note 2) Steady TC = 25°C State Power Dissipation (Note 2) Continuous Drain Current (Note 2) Steady TC = 100°C State Power Dissipation (Note 2) Pulsed Drain Current (Note...