• Part: NTBL023N065M3S
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 518.47 KB
Download NTBL023N065M3S Datasheet PDF
onsemi
NTBL023N065M3S
Features - Typical RDS(on) = 23 m W @ VGS = 18 V - Ultra Low Gate Charge (QG(tot) = 69 n C) - High Speed Switching with Low Capacitance (Coss = 152 p F) - 100% Avalanche Tested - This Device is Halide Free and Ro HS pliant with Exemption 7a, Pb- Free 2LI (on second level interconnection) Applications - SMPS (Switching Mode Power Supplies) - Solar Inverters - UPS (Uninterruptable Power Supplies) - Energy Storage - Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - 8/+22 V Continuous Drain Current TC = 25°C Power Dissipation Continuous Drain Current TC = 100°C Power Dissipation Pulsed Drain Current (Note 1) TC = 25°C IDM tp = 100 ms Continuous Source- Drain Current (Body Diode) TC = 25°C, VGS = - 3...