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NTBL023N065M3S - SiC MOSFET

Datasheet Summary

Features

Typical RDS(on) = 23 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 69 nC).
High Speed Switching with Low Capacitance (Coss = 152 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
Free 2LI (on second level interconnection).

onsemi

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NTBL023N065M3S SiC MOSFET by onsemi - Datasheet Preview — Datasheet preview – NTBL023N065M3S

Datasheet Details

Part number	NTBL023N065M3S
Manufacturer	onsemi
File Size	518.47 KB
Description	SiC MOSFET
Datasheet	NTBL023N065M3S Datasheet
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Published: Apr 29, 2025 |