NTC020N120SC1
NTC020N120SC1 is SiC MOSFET manufactured by onsemi.
Description
Silicon Carbide (Si C) MOSFET uses a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- 1200 V @ TJ = 175°C
- Typ RDS(on) = 20 m W at VGS = 20 V, ID = 60 A
- High Speed Switching with Low Capacitance
- 100% UIL Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Applications
- Industrial Motor Drive
- UPS
- Boost Inverter
- PV Charger
DIE DATA SHEET .onsemi.
V(BR)DSS 1200 V
RDS(on) MAX 28 m W @ 20 V
ID MAX 103 A
N- CHANNEL MOSFET D
S DIE DIAGRAM
S1
S2
S3
Die Information
S Wafer Diameter
S Die Size S Metallization
⋅ Top ⋅ Back S Die Thickness
S Gate Pad Size
6 inch 4,300 x 6,300 mm
Ti/Ti N/Al Ti/Ni V/Ag Typ. 200 mm
600 x 310 mm
5 mm
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor ponents Industries, LLC, 2018
January, 2023
- Rev....
