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NTHL032N065M3S - SiC MOSFET

Key Features

  • Typical RDS(on) = 32 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 55 nC).
  • High Speed Switching with Low Capacitance (Coss = 114 pF).
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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