NTHL032N065M3S
NTHL032N065M3S is SiC MOSFET manufactured by onsemi.
Features
- Typical RDS(on) = 32 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 55 n C)
- High Speed Switching with Low Capacitance (Coss = 114 p F)
- 100% Avalanche Tested
- This Device is Halide Free and Ro HS pliant with Exemption 7a,
Pb- Free 2LI (on second level interconnection)
Applications
- SMPS, Solar Inverters, UPS, Energy Storages, EV Charging
Infrastructure
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Power Dissipation Continuous Drain Current (Note 1)
TC = 25°C TC = 100°C
VDSS VGS ID PD ID
650 V
- 8/+22 V
200 W
Power Dissipation
Pulsed Drain Current (Note 2)
TC = 25°C
IDM tp = 100 ms
Continuous Source- Drain Current
TC = 25°C
VGS =
- 3 V
TC = 100°C VGS =
- 3 V
Pulsed Source- Drain Current (Body Diode) (Note 2)
TC = 100°C
VGS =
- 3 V tp = 100 ms
Single Pulse Avalanche Energy ILPK = 16.7 A, EAS
(Note...
