onsemi NTMFS4835N
Power MOSFET
FEATURES
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V
● CPU Power Delivery
● DC−DC Converters
● Low Side Switching
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 20 14 2.27 12 9.0 0.89 104 75 62.5 208 −55 to +150 52 6 392 W A °C A V/ns mJ W W A Unit V V AAPPLICATIONS
RDS(ON) MAX 3.5 mW @ 10 V 5.0 mW @ 4.5 V D (5,6) ID MAX 104 A G (4) S (1,2,3) N−CHANNEL MOSFET MARKI...