onsemi NTMFS4839N
Power MOSFET
FEATURES
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● Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V
APPLICATIONS
RDS(ON) MAX 5.5 mW @ 10 V 9.5 mW @ 4.5 V ID MAX 66 A● CPU Power Delivery
● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 15 11 2.17 9.5 7.0 0.87 66 48 41.7 132 −55 to +150 35 6 180.5 W A °C A V/ns mJ W A W Unit V V D (5,6) G (4) A S (1,2,3) N−CHANNEL MOSFET A MARKING DIAGRAM D 1 SO...