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NTMFS4852N Datasheet PDF

onsemi NTMFS4852N

Power MOSFET

Part No. NTMFS4852N
Datasheet NTMFS4852N Download
Manufacturer
onsemi
Description Power MOSFET
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NTMFS4852N datasheet page 1 preview

FEATURES

30 V, 155 A, Single N−Channel, SO−8 FL
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device V(BR)DSS 30 V RDS(ON) MAX 2.1 mW @ 10 V 3.1 mW @ 4.5 V ID MAX 155 A

APPLICATIONS

Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters Low Side Switching

MAXIMUM RATINGS

(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG I...
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