onsemi NTMFS4854NS
Power MOSFET
FEATURES
● Accurate, Lossless Current Sensing● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
● Low Side Switching
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VGS ±16 V TA = 25°C ID 24.4 A TA = 85°C 17.6 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.31 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 85°C State Power Dissipation TA = 25°C PD RqJA (Note 2) 15.2 A 11 0.9 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 149 A TC = 85°C 107.5 Power Dissipation RqJC (Note 1) TC = 25°C PD 86.2 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 298 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Source Cur...