onsemi NTMFS4897NF
30 V N-Channel Power MOSFET
FEATURES
30 V, 171 A, Single N−Channel, SO−8 FL●
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device
APPLICATIONS
V(BR)DSS 30 V RDS(ON) MAX 2.0 mW @ 10 V 3.0 mW @ 4.5 V ID MAX 171 A● CPU Power Delivery
● DC−DC Converters
● Low Side Switching
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS...