onsemi NTMFS4899NF
N-Channel Power MOSFET
FEATURES
● Integrated Schottky Diode● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
● Low Side Switching
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 85°C VDSS VGS ID 30 ±20 17.8 12.9 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec TA = 25°C PD TA = 25°C ID TA = 85°C 2.70 29.1 21 Power Dissipation TA = 25°C PD 7.18 RqJA, t v 10 sec Steady Continuous Drain State TA = 25°C ID 10.4 Current RqJA (Note 2) TA = 85°C 7.5 Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C PD TC = 25°C ID TC = 85°C 0.92 75 54 Power Dissipation RqJC (Note 1) TC = 25°C PD 48 Pulsed Drain Current tp=10ms TA = 25°C ID...