onsemi NTMFS4935N
Power MOSFET
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery, DC−DC ConvertersMAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 21.8 13.8 V V A Power Dissipation RqJA (Note 1) Continuous Drain 1C0ursre(NntoRteqJ1A) ≤ TA = 25°C TA = 25°C TA = 100°C PD ID 2.63 W 40 A 25 Power Dissipation R(NqoJAte≤11) 0 s Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 100°C PD ID 8.7 W 13 A 8.2 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC = 85°C PD ID 0.93 W 93 A 59 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C TA = 25°C, tp = 10 ms PD IDM 48 W 275 A Current Limited by Pa...