onsemi NTMFS4936N
N-Channel Power MOSFET
FEATURES
● Low RDS(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, Driver and Switching Losses● Next Generation Enhanced Body Diode, Engineered for Soft Recovery, Provides Schottky−Like Performance
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 19.5 A TA = 100°C 12.3 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C PD TA = 25°C ID TA = 100°C 2.62 W 35 A 22 Power Dissipation TA = 25°C PD RqJA ≤ 10 s (Note 1) Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 2) TA = 100°C 8.4 W 11.6 A 7.3 Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C PD TC = 25°C ID TC =100°C 0.92 W 79 A 50 Power Dissipation RqJC (Note 1)...