onsemi NTMFS4939N
Power MOSFET
FEATURES
30 V, 53 A, Single N−Channel, SO−8 FL●
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 30 V RDS(ON) MAX 5.5 mW @ 10 V 8.0 mW @ 4.5 V D (5,6) Value 30 ±20 15.7 9.9 PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS 2.58 26 17 7.6 9.3 5.9 0.92 53 34 30 159 100 −55 to +150 27 7.0 48 W A A °C A V/ns mJ NTMFS4939NT3G W A W A 1 ID MAX 53 A
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Curre...