onsemi NTMFS4941N
Power MOSFET
FEATURES
30 V, 47 A, Single N−Channel, SO−8 FL●
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 30 V RDS(ON) MAX 6.2 mW @ 10 V 9.0 mW @ 4.5 V D (5,6) ID MAX 47 A
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Symbol VDSS VGS TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS PD ID ID Value 30 ±20 15 9.4 2.56 25 16 7.2 Unit V V A S...