onsemi NTMFS4945N
Power MOSFET
FEATURES
30 V, 35 A, Single N−Channel, SO−8 FL●
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 13 mW @ 4.5 V D (5,6) Value 30 ±20 12.4 7.9 PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS 2.54 20 12.6 6.5 7.4 4.7 0.91 35 22 19.8 104 100 −55 to +150 18 8.0 26.5 W A A °C A V/ns mJ NTMFS4945NT3G 260 °C W A W A S S S G W A S (1,2,3) N−CHANNEL MOSFET Unit V V A G (4) ID MAX 35 A
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Curren...