onsemi NTMFS4955N
N-Channel Power MOSFET
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● Optimized for 5 V, 12 V Gate Drives
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 100°C Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C TA = 25°C TA = 100°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 100°C Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C TC = 25°C TC =100°C Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C TA = 25°C, tp = 10 ms VDSS VGS ID PD ID PD ID PD ID PD IDM 30 ±20 16.7 10.5 2.70 25.2 15.9 6.16 9.7 6.2 0.92...