onsemi NTMFS4957N
Power MOSFET
FEATURES
● Optimized for PortableAPPLICATIONS
with 5 V Gate Drive● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
● Notebook Battery Management
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 17.1 10.9 V V A Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 25°C TA = 100°C PD ID 2.6 W 30 A 19 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 100°C PD ID 8.1 W 10.2 A 6.5 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC = 85°C PD ID 0.92 W 70 A 44 Power Dissipation RqJC (Note...