onsemi NTMFS4982NF
Power MOSFET
FEATURES
● Integrated Schottky Diode● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Server, Netcom, POL● Synchronous Rectification for DC−DC Converters
● Low Side Switching
● High Performance
APPLICATIONS
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA VDSS 30 V VGS ±20 V TA = 25°C ID 36 A TA = 85°C 26 Power Dissipation RqJA (Note 1) Continuous Drain Current 10 sec RqJA v TA = 25°C TA = 25°C TA = 85°C PD ID 2.7 W 60 A 43 Power Dissipation RqJA, t v 10 sec Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 85°C PD ID 7.4 W 26.5 A 19 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC = 85°C PD ID 1.5 W 207 A 149 Power Dissipation RqJC (Note 1) TC = 25°C P...