onsemi NTMFS4983NF
Power MOSFET
FEATURES
● Integrated Schottky Diode● Low RDS(on) to Minimize Conduction Losses
● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● Synchronous Rectification for DC−DC Converters
● Low Side Switching
● Telecom Secondary Side Rectification
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 30 A TA = 85°C 22 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec TA = 25°C TA = 25°C TA = 85°C PD ID 3.13 W 48 A 34 Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C PD ID 7.7 W 22 A 16 Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C TC = 25°C TC = 85°C PD ID 1.7 W 106 A 76 Power D...