onsemi NTMFS4C024N
N-Channel Power MOSFET
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA ≤ 10 s (Note 2) TA = 25°C TA = 80°C TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA ≤ 10 s (Note 2) Continuous Drain Current RqJA (Note 3) Steady State TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA (Note 3) TA = 25°C Continuous Drain Current RqJC (Note 2) TC = 25°C TC =80°C Power Dissipation RqJC (Note 2) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Drain to...