onsemi NTMFS4C028N
Power MOSFET
| Part No. | NTMFS4C028N |
|---|---|
| Datasheet | NTMFS4C028N Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C TA = 80°C TA = 25°C TA = 25°C TA = 80°C VDSS VGS ID PD ID 30 ±20 16.4 12.3 2.51 25.3 19.0 V V A W A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Steady State TA = 25°C TA = 25°C TA = 80°C TA = 25°C TC = 25°C TC =80°C PD ID PD ID 6.0 W 9.0 A
