NTMFS4C03N Datasheet PDF

FEATURES

● Small Footprint (5x6 mm) for Compact Design
● Low RDS(on) to Minimize Conduction Losses
● Low QG and Capacitance to Minimize Driver Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Steady State TC = 25°C TC = 25°C Continuous Drain Cur- rent 3) RqJA (Notes 1, 2, Power Dissipation RqJA (Notes 1, 2, 3) Steady State TA = 25°C TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID 30 "20 136 64 30 PD 3.1 IDM TJ, Tstg 900 −55 to 150 V V A W A W A °C Source Current (Body Diode) IS 53 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 549 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.