onsemi NTMFS4C06N
N-Channel Power MOSFET
| Part No. | NTMFS4C06N |
|---|---|
| Datasheet | NTMFS4C06N Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 20.0 A TA = 80°C 14.9 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C PD TA = 25°C ID TA = 80°C 2.55 W 31.6 A 23.7 Power Dissipation TA = 25°C PD RqJA ≤ 10 s (Note 1) Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 2) TA = 80°C 6.4 W 11 A 8.2 Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C PD TC = 25°C ID TC =80°C 0.77 W 69 A 52 Power Dissipation RqJC (Note 1) TC = 25°C PD 30.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 476 A O...
