onsemi NTMFS4C08N
30V 52A N-Channel Power MOSFET
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● CPU Power Delivery● DC−DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) VDSS 30 V VGS ±20 V TA = 25°C ID 16.4 A TA = 80°C 12.3 TA = 25°C PD 2.51 W Continuous Drain Current RqJA ≤ 10 s (Note 2) TA = 25°C ID TA = 80°C 25.3 A 19.0 Power Dissipation TA = 25°C PD RqJA ≤ 10 s (Note 2) Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 3) TA = 80°C Power Dissipation RqJA (Note 3) TA = 25°C PD 6.0 W 9.0 A 6.8 0.76 W Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) TC = 25°C ID TC =80°C TC = 25°C PD 52 A 39 25.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM Pulsed...