onsemi NTMFS4H013NF
25V 269A N-Channel Power MOSFET
| Part No. | NTMFS4H013NF |
|---|---|
| Datasheet | NTMFS4H013NF Download |
| Manufacturer |  onsemi |
| Description | 25V 269A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Integrated Schottky Diode● Optimized Design to Minimize Conduction and Switching Losses
● Optimized Package to Minimize Parasitic Inductances
● Optimized material for improved thermal performance
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● High Performance DC-DC Converters● System Voltage Rails
● Netcom, Telecom
● Servers & Point of Load
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 51 Apk, L = 0.3 mH) Drain to Source dV/dt VDSS VGS ID PD ID PD IDM EAS dV/dt 25 V ±20 V 43 A 2.70 W 269 A 104 W 505 A 390 mJ 7 V/ns Maximum Junction Temperature Storage Temperature Range TJ(max...
