onsemi NTMFS4H02NF
Power MOSFET
| Part No. | NTMFS4H02NF |
|---|---|
| Datasheet | NTMFS4H02NF Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Integrated Schottky Diode● Optimized Design to Minimize Conduction and Switching Losses
● Optimized Package to Minimize Parasitic Inductances
● Optimized material for improved thermal performance
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● High Performance DC-DC Converters● System Voltage Rails
● Netcom, Telecom
● Servers & Point of Load
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) VDSS VGS ID 25 ±20 37 V V A Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 38 Apk, L = 0.3 mH) PD 3.13 W ID 193 A PD 83 W IDM 449 A EAS 223 mJ Drain to Source dV/dt dV/dt 7 V/ns Maximum Junction Temperature Storage Temperature Range TJ(max)...
