onsemi NTMFS4H11NF
Power MOSFET
| Part No. | NTMFS4H11NF |
|---|---|
| Datasheet | NTMFS4H11NF Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Integrated Schottky Diode● Optimized Design to Minimize Conduction and Switching Losses
● Optimized Package to Minimize Parasitic Inductances
● Optimized material for improved thermal performance
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
APPLICATIONS
● High Performance DC-DC Converters● System Voltage Rails
● Netcom, Telecom
● Servers
● Point of Load
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 57 Apk, L = 0.3 mH) Drain to Source dV/dt VDSS VGS ID PD ID PD IDM EAS dV/dt 25 V ±20 V 54 A 3.2 W 334 A 125 W 568 A 487 mJ 7 V/ns Maximum Junction Temperature Storage Temperature Range TJ(max) TSTG 150 −55 to 150 °C °C Lead Temperature...
