onsemi NTMFS5830NL
Power MOSFET
| Part No. | NTMFS5830NL |
|---|---|
| Datasheet | NTMFS5830NL Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C Steady State TA = 70°C TC = 25°C TC = 70°C TC = 25°C TC = 70°C tp = 10 ms IDM TJ, TSTG IS EAS PD ID PD Symbol VDSS VGS ID Value 40 ±20 28 22 3.2 2.0 172 138 125 80 690 −55 to +150 172 361 A °C A mJ W A W Unit V V A V(BR)DSS 40 V RDS(ON) MAX 2.3 mW @ 10 V 3.6 mW @ 4.5 V D (5) ID MAX 172 A G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD...
