NTMFS5C450NL Datasheet PDF

FEATURES

● Small Footprint (5x6 mm) for Compact Design
● Low RDS(on) to Minimize Conduction Losses
● Low QG and Capacitance to Minimize Driver Losses
● These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 110 A 81 68 W 34 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 27 A 19 3.7 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 740 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) IS 76 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7 A) EAS 215 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.