NTMFS5C460NL Datasheet PDF

FEATURES

● Small Footprint (5x6 mm) for Compact Design
● Low RDS(on) to Minimize Conduction Losses
● Low QG and Capacitance to Minimize Driver Losses
● These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 78 A 55 50 W 25 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 21 A 15 3.6 W 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 520 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) IS 56 A EAS 107 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.