NTMJS1D0N04C Datasheet PDF

FEATURES

● Small Footprint (5x6 mm) for Compact Design
● Low RDS(on) to Minimize Conduction Losses
● Low QG and Capacitance to Minimize Driver Losses
● LFPAK-E Package, Industry Standard
● These Devices are Pb-Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25 °C ID Steady TC = 100 °C State TC = 25 °C PD TC = 100 °C 300 A 212 166 W 83 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25 °C ID Steady TA = 100 °C State TA = 25 °C PD TA = 100 °C 46 A 32 3.9 W 1.9 Pulsed Drain Current TA = 25 °C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C + 175 Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 34 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 158 A EAS 578 mJ TL 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.