onsemi NTMS4176P
Power MOSFET
FEATURES
●ăLow RDS(on) to Minimize Conduction Losses●ăLow Capacitance to Minimize Driver Losses
●ăOptimized Gate Charge to Minimize Switching Losses
●ăSOIC-8 Surface Mount Package Saves Board Space
●ăThis is a Pb-Free Device
APPLICATIONS
V(BR)DSS -30 V RDS(on) Max 18 mW @ -10 V 30 mW @ -4.5 V ID Max -9.6 A●ăLoad Switches
●ăNotebook PC's
●ăDesktop PC's
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS EAS PD ID PD ID Symbol VDSS VGS ID Value -30 ±25 -7.3 -5.8 1.44 -5.5 -4.4 0.81 -9.6 -7.7 2.5 -39 -55 to +150 -2.1 112.5 W A °C A mJ W A 8 1 W...