onsemi NTMS4404N
N-Channel Power MOSFET
| Part No. | NTMS4404N |
|---|---|
| Datasheet | NTMS4404N Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency● Miniature SO−8 Surface Mount Package Saving Board Space
● IDSS Specified at Elevated Temperature
● Diode Exhibits High Speed, Soft Recovery
APPLICATIONS
● Power Management for Battery Power Products● Portable Products
● Computers, Printers, PCMCIA Cards
● Cell Phones, Cordless Telephones
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS $20 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 70°C tp v10 s TA = 25°C 9.6 A 7.6 12 Power Dissipation (Note 1) Steady State tp v10 s PD 1.56 W 2.5 Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady TA = 25°C ID State TA = 70°C TA = 25°C PD 7.0 A 5.6 0.83 W Pulsed Drain Current tp = 10 ms, DC = 2 % Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 20 V, VGS = 5 V, IPK...
